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InGaAs diode laser system generating pulses of 580 fs duration and 366 W peak power

Identifieur interne : 006505 ( Main/Repository ); précédent : 006504; suivant : 006506

InGaAs diode laser system generating pulses of 580 fs duration and 366 W peak power

Auteurs : RBID : Pascal:08-0481884

Descripteurs français

Pascal (Inist)
- Blocage mode laser, Compression impulsion optique, Laser semiconducteur, Diode laser, Laser mode bloqué, Optique non linéaire, Domaine temps fs, Domaine temps ps, Durée impulsion, Composé ternaire, Gallium Arséniure, Indium Arséniure, As Ga In, Laser InGaAs, Blocage mode passif, InGaAs, Système MOPA, 4255P, 4265R, 4260F.

English descriptors

KwdEn :
- Gallium Arsenides, Indium Arsenides, Laser diodes, Laser mode locking, Mode locked laser, Nonlinear optics, Optical pulse compression, Pulse width, Semiconductor lasers, Ternary compounds, fs range, ps range.

Abstract

This paper reports the generation of fs light pulses by a passively mode-locked InGaAs master oscillator power amplifier (MOPA) system. The laser system generates chirped pulses with 6.2 ps duration, a center wavelength of 922 nm and 4 GHz repetition rate. Pulse compression by an external grating compressor reduces the pulse duration to 580 fs. The average power of the compressed pulses of 851 mW corresponds to a peak power of 366 W.

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Pascal:08-0481884

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">InGaAs diode laser system generating pulses of 580 fs duration and 366 W peak power</title>
<author><name sortKey="Ulm, Thorsten" uniqKey="Ulm T">Thorsten Ulm</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>University of Kaiserslautem, Erwin-Schrodinger-Strasse 46</s1>
<s2>67663 Kaiserslautern</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="2">Rhénanie-Palatinat</region>
<settlement type="city">Kaiserslautern</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Harth, Florian" uniqKey="Harth F">Florian Harth</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>University of Kaiserslautem, Erwin-Schrodinger-Strasse 46</s1>
<s2>67663 Kaiserslautern</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="2">Rhénanie-Palatinat</region>
<settlement type="city">Kaiserslautern</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Fuchs, Harry" uniqKey="Fuchs H">Harry Fuchs</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>University of Kaiserslautem, Erwin-Schrodinger-Strasse 46</s1>
<s2>67663 Kaiserslautern</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="2">Rhénanie-Palatinat</region>
<settlement type="city">Kaiserslautern</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="L Huillier, Johannes A" uniqKey="L Huillier J">Johannes A. L Huillier</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>University of Kaiserslautem, Erwin-Schrodinger-Strasse 46</s1>
<s2>67663 Kaiserslautern</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="2">Rhénanie-Palatinat</region>
<settlement type="city">Kaiserslautern</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Wallenstein, Richard" uniqKey="Wallenstein R">Richard Wallenstein</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>University of Kaiserslautem, Erwin-Schrodinger-Strasse 46</s1>
<s2>67663 Kaiserslautern</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country>Allemagne</country>
<placeName><region type="land" nuts="2">Rhénanie-Palatinat</region>
<settlement type="city">Kaiserslautern</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">08-0481884</idno>
<date when="2008">2008</date>
<idno type="stanalyst">PASCAL 08-0481884 INIST</idno>
<idno type="RBID">Pascal:08-0481884</idno>
<idno type="wicri:Area/Main/Corpus">006152</idno>
<idno type="wicri:Area/Main/Repository">006505</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0946-2171</idno>
<title level="j" type="abbreviated">Appl. phys., B Lasers opt. : (Print)</title>
<title level="j" type="main">Applied physics. B, Lasers and optics : (Print)</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Gallium Arsenides</term>
<term>Indium Arsenides</term>
<term>Laser diodes</term>
<term>Laser mode locking</term>
<term>Mode locked laser</term>
<term>Nonlinear optics</term>
<term>Optical pulse compression</term>
<term>Pulse width</term>
<term>Semiconductor lasers</term>
<term>Ternary compounds</term>
<term>fs range</term>
<term>ps range</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Blocage mode laser</term>
<term>Compression impulsion optique</term>
<term>Laser semiconducteur</term>
<term>Diode laser</term>
<term>Laser mode bloqué</term>
<term>Optique non linéaire</term>
<term>Domaine temps fs</term>
<term>Domaine temps ps</term>
<term>Durée impulsion</term>
<term>Composé ternaire</term>
<term>Gallium Arséniure</term>
<term>Indium Arséniure</term>
<term>As Ga In</term>
<term>Laser InGaAs</term>
<term>Blocage mode passif</term>
<term>InGaAs</term>
<term>Système MOPA</term>
<term>4255P</term>
<term>4265R</term>
<term>4260F</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">This paper reports the generation of fs light pulses by a passively mode-locked InGaAs master oscillator power amplifier (MOPA) system. The laser system generates chirped pulses with 6.2 ps duration, a center wavelength of 922 nm and 4 GHz repetition rate. Pulse compression by an external grating compressor reduces the pulse duration to 580 fs. The average power of the compressed pulses of 851 mW corresponds to a peak power of 366 W.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0946-2171</s0>
</fA01>
<fA03 i2="1"><s0>Appl. phys., B Lasers opt. : (Print)</s0>
</fA03>
<fA05><s2>92</s2>
</fA05>
<fA06><s2>4</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>InGaAs diode laser system generating pulses of 580 fs duration and 366 W peak power</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>ULM (Thorsten)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>HARTH (Florian)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>FUCHS (Harry)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>L'HUILLIER (Johannes A.)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>WALLENSTEIN (Richard)</s1>
</fA11>
<fA14 i1="01"><s1>University of Kaiserslautem, Erwin-Schrodinger-Strasse 46</s1>
<s2>67663 Kaiserslautern</s2>
<s3>DEU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA20><s1>481-485</s1>
</fA20>
<fA21><s1>2008</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>16194B</s2>
<s5>354000196567100020</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2008 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>26 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>08-0481884</s0>
</fA47>
<fA60><s1>P</s1>
<s3>CC</s3>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Applied physics. B, Lasers and optics : (Print)</s0>
</fA64>
<fA66 i1="01"><s0>DEU</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>This paper reports the generation of fs light pulses by a passively mode-locked InGaAs master oscillator power amplifier (MOPA) system. The laser system generates chirped pulses with 6.2 ps duration, a center wavelength of 922 nm and 4 GHz repetition rate. Pulse compression by an external grating compressor reduces the pulse duration to 580 fs. The average power of the compressed pulses of 851 mW corresponds to a peak power of 366 W.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B55P</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B40B65R</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B40B60F</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Blocage mode laser</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Laser mode locking</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Compression impulsion optique</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Optical pulse compression</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Laser semiconducteur</s0>
<s5>09</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Semiconductor lasers</s0>
<s5>09</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Diode laser</s0>
<s5>11</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Laser diodes</s0>
<s5>11</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Laser mode bloqué</s0>
<s5>12</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Mode locked laser</s0>
<s5>12</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Laser modo bloqueado</s0>
<s5>12</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Optique non linéaire</s0>
<s5>17</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Nonlinear optics</s0>
<s5>17</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Domaine temps fs</s0>
<s5>41</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>fs range</s0>
<s5>41</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Domaine temps ps</s0>
<s5>42</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>ps range</s0>
<s5>42</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Durée impulsion</s0>
<s5>43</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Pulse width</s0>
<s5>43</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Duración impulso</s0>
<s5>43</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>50</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>50</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Gallium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Laser InGaAs</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Blocage mode passif</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Système MOPA</s0>
<s4>INC</s4>
<s5>86</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>4265R</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>4260F</s0>
<s4>INC</s4>
<s5>93</s5>
</fC03>
<fN21><s1>316</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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InGaAs diode laser system generating pulses of 580 fs duration and 366 W peak power

InGaAs diode laser system generating pulses of 580 fs duration and 366 W peak power

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri